Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures

Title: Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures
Creator: Warschkow, O.; Wilson, H. F.; Marks, N. A.; Schofield, S. R.; Curson, N. J.; Smith, P. V.; Radny, M. W.; McKenzie, D. R.; Simmons, M. Y.
Relation: Physical Review B Vol. 72, Issue 12, p. 125328-1-125328-15
Publisher Link: http://dx.doi.org/10.1103/PhysRevB.72.125328
Publisher: American Physical Society
Resource Type: journal article
Date: 2005
Description: We report a comprehensive ab initio survey of possible dissociation intermediates of phosphine (PH3) on the Si(001) surface. We assign three scanning tunneling microscopy (STM) features, commonly observed in room-temperature dosing experiments, to PH2+H, PH+2H, and P+3H species, respectively, on the basis of calculated energetics and STM simulation. These assignments and a time series of STM images which shows these three STM features converting into another, allow us to outline a mechanism for the complete dissociation of phosphine on the Si(001) surface. This mechanism closes an important gap in the understanding of the doping process of semiconductor devices.
Subject: phosphorus compounds; silicon; elemental semiconductors; ab initio calculations; scanning tunnelling microscopy; adsorption; dissociation; semiconductor doping
Identifier: http://hdl.handle.net/1959.13/27471
Identifier: uon:1703
Identifier: ISSN:1098-0121
Language: eng
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